Inductor-less 6~18 GHz 7-Bit 28 dB Variable Attenuator Using 0.18 μm CMOS Technology
نویسندگان
چکیده
منابع مشابه
Micromachined 28-GHz Power Divider in CMOS Technology
A broad-band power divider is presented in CMOS technology. The devices are realized by postprocessing chips that are fabricated in a standard 1.2m CMOS process. Developed postprocessing includes wire bonding for ground equalization, deposition of a stress-compensation layer, and selective etching of the silicon substrate. By employing coupled coplanar transmission lines, the area of dividers i...
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ژورنال
عنوان ژورنال: The Journal of Korean Institute of Electromagnetic Engineering and Science
سال: 2016
ISSN: 1226-3133
DOI: 10.5515/kjkiees.2016.27.1.60